AMBIENTUM BIOETHICA BIOLOGIA CHEMIA DIGITALIA DRAMATICA EDUCATIO ARTIS GYMNAST. ENGINEERING EPHEMERIDES EUROPAEA GEOGRAPHIA GEOLOGIA HISTORIA HISTORIA ARTIUM INFORMATICA IURISPRUDENTIA MATHEMATICA MUSICA NEGOTIA OECONOMICA PHILOLOGIA PHILOSOPHIA PHYSICA POLITICA PSYCHOLOGIA-PAEDAGOGIA SOCIOLOGIA THEOLOGIA CATHOLICA THEOLOGIA CATHOLICA LATIN THEOLOGIA GR.-CATH. VARAD THEOLOGIA ORTHODOXA THEOLOGIA REF. TRANSYLVAN
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Authors: MARIANA POP, G. NEGREA, A. POP.
DOI: 10.24193/subbphys.2018.07
Published Online: 2018-12-20
Published Print: 2018-12-20
pp. 75-88
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The DC sputtering method based on the variation of the potential of target function of nitrogen flow rate, for the deposition of titanium nitride (TiN) films, with the elementary chemical composition close to the stoichiometric one is presented. The process control method used in these experiments is the identification of the nitrogen flow required for the deposition of stoichiometric TiN layers by using the target potential as the reference parameter. The effects of the nitrogen flow, polarization voltage and discharge current on the structure, microstructure and micro-hardness of TiN films was studied.
Keywords: TiN films, DC sputtering, XRD, hardness.
