The STUDIA UNIVERSITATIS BABE┼×-BOLYAI issue article summary

The summary of the selected article appears at the bottom of the page. In order to get back to the contents of the issue this article belongs to you have to access the link from the title. In order to see all the articles of the archive which have as author/co-author one of the authors mentioned below, you have to access the link from the author's name.

 
       
         
    STUDIA PHYSICA - Issue no. 1 / 2007  
         
  Article:   EXCHANGE BIAS, GIANT MAGNETORESISTANCE, TUNNEL MAGNETORESISTANCE AND MAGNETIC RANDOM ACCESS MEMORIES.

Authors:  J.M. DE TERESA.
 
       
         
  Abstract:  The study of electrical transport in magnetic materials has a long history. However, since the discovery in 1988 of the so-called giant magnetoresistance (GMR) in metallic multilayers [1], the subject has generated a great deal of interest. This was important not only from the basic research point of view but also from the applied research point of view. In 1997 IBM introduced in the hard-disk technology magnetoresistive read heads based on the GMR effect, which has allowed the increase in the density of the stored information in hard disks at a rate much beyond previous technologies [2]. GMR can be considered to be the first paradigm of the so-called Spin Electronics, where, in sharp contrast with semiconductor technology, the spin as well as the charge transport is taken into account. This field could be developed thanks to the fine nanometric control of thin films in the growth direction .  
         
     
         
         
      Back to previous page