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    STUDIA CHEMIA - Issue no. 4(I) / 2009  
         
  Article:   MECHANISTIC STUDY OF SE AND GE SEMICONDUCTORS ELECTRODEPOSITION.

Authors:  ADRIANA SAMIDE, BOGDAN TUTUNARU, MIRCEA PREDA.
 
       
         
  Abstract:  The electrodeposition and mechanism of nucleation of Se and Se-Ge films was studied in this work. The employed experimental techniques were potentiostatic polarization and chronoamperometry. The initial deposition of Se film by potentiostatic polarization shows that the crystallization potential of -0,40 V and corresponding densities linearly depends on the H2SeO3 concentration and potential scan rate. The simultaneous presence of both species in the bath composition produced a new peak at -0,50 V. The chronoamperometric study indicate a 3D complex mechanism for Se and Se-Ge electrodeposition. The morphological changes in surface of working electrode was analysed with an Euromex microscope.

Keywords: Semiconductors, Se and Se2Ge electrodeposition, nucleation mechanism
 
         
     
         
         
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