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    STUDIA CHEMIA - Issue no. 1 / 2003  
         
  Article:   PHOTOELECTROCHEMICAL PHENOMENA ON SEMICONDUCTOR REDOX GLASS ELECTRODES.

Authors:  ELISABETA VERESS, VICTOR LITEANU, IULIU OVIDIU MARIAN, ANDREEA OLTEAN.
 
       
         
  Abstract:  Photoelectrochemical properties of the SiO2-Na2O-B2O3-Fe2O3-FeO-Al2O3 semiconductor glass are investigated in order to evaluate the radiation contribution to the electrode potential of redox sensors. For this purpose the open circuit phototension was determined in the presence of the Fe(CN)3-6 / Fe(CN)64- redox couple, depending on the incident radiation power and the working electrolyte pH, using 514.5 and 488.0 nm laser excitation. The nearly logarithmic shape of the ∆Uphoc-P function in visible domain (514.5 and 488.0 nm) corresponds to an Schottky junction.  
         
     
         
         
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